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Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 20, 2007, Pages

Wetting of GaN islands by excess Ga: Origin of different appearances of GaN islands in scanning tunneling microscopy

(4) Zheng, Hao a,b Xie, M H a Wu, H S a Xue, Q K b

a UNIVERSITY OF HONG KONG (Hong Kong)

b INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34347355395 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.75.205310 Document Type: Article

Times cited : (9)

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