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Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 376-380

Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy

(5) Zheng, L X a,b Xie, M H a Xu, S J a Cheung, S H a Tong, S Y a

a UNIVERSITY OF HONG KONG (Hong Kong)

b INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

A1. Surface processes; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES;

CURRENT-INDUCED MIGRATION; SURFACE ADATOMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035398060 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00727-8 Document Type: Conference Paper

Times cited : (10)

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