A statistical evaluation of the field acceleration parameter observed during time dependent dielectric breakdown testing of silica-based low-k interconnect dielectrics

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 478-483

  Kim, Jinyoung ^a   Ogawa, Ennis T ^a   McPherson, Joe W ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

BEOL; Breakdown; Field acceleration parameter; Low k dielectric; Reliability; TDDB

Indexed keywords

FIELD ACCELERATION PARAMETERS; INTERCONNECT DIELECTRICS;

DATA ACQUISITION; ELECTRIC BREAKDOWN; PARAMETER ESTIMATION; RELIABILITY; SILICA; STATISTICAL METHODS;

DIELECTRIC MATERIALS;

EID: 34250736820     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251265     Document Type: Conference Paper

References (19)

1. R. Tsu, J. W. McPherson, and W. R. McKee, "Leakage and breakdown reliability issues associated with Low-k dielectrics in a Dual-Damascene Cu process," IEEE-IRPS Proceedings, pp. 348-353 (2000).
2. J. Noguchi, T. Saito, N. Ohashi, H. Ashihara, H. Maruyama, M. Kubo, H. Yamaguchi, D. Ryuzaki, K. Takeda, and K. Hinode, "Impact of Low-K Dielectrics and Barrier Metals on TDDB Lifetime of Cu Interconnects," IEEE-IRPS Proceedings, pp. 355-359 (2001).
3. W. S. Song, T. J. Kim, D. H. Lee, T. K. Kim, C. S. Lee, J. W. Kim, S. Y. Kim, D. K. Jeong, K. C. Park, Y. J. Wee, B. S. Suh, S. M. Choi, H.-K. Kang, K. P. Suh, and S. U. Kim, "Pseudobreakdown events induced by biased-thermal-stressing of intra-level Cu interconnects - reliability & performance impact," IEEE-IRPS Proceedings, pp. 355-359 (2002).
4. Ennis T. Ogawa, Jinyoung Kim, Gaddi Haase, Homi C. Mogul and Joe W. McPherson, "Leakage, breakdown and TDDB characteristics of porous Low-k silica-based interconnect dielectrics", in IRPS Proceedings, pp. 166-172 (2003).
5. W. Wu, X. Duan, and J. S. Yuan, "A physical model of timedependent dielectric breakdown in Cu metallization," in IRPS Proceedings, pp.773-776 (2003).
6. Glenn B. Alers, K. Jow, R. Shaviv, Gerrit Kooi, and G. W. Ray, "Interlevel Dielectric Failures in Copper/ Low-k Structures" IEEE Trans. Device and Material Reliability, Vol. 4,No.2.,pp. 148-152(2004).
7. J.W. McPherson and D. A. Baglee, "Acceleration factors for gate oxide stressing," in IRPS Proceedings, pp. 1-5 (1985).
8. J. W. McPherson and H. C. Mogul, "Underlying physics of the thermochemical E model in describing low-field timedependent breakdown in SiO thin films," J. Appl. Phys., Vol. 84, No. 3, pp. 1513-1523 (1998).
9. I.C. Chen, S. Holland, and C. Hu, "A quantitave physical modelfor time-dependent breakdown in SiO2, IEEE-IRPS Proceedings, pp 24-31 (1985).
10. J. W. McPherson and R. B. Khamankar, "Molecular model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics and the reliability implications for hyper-thin gate oxide," Semicond. Sci. Technol., Vol. 15, pp. 462-470, (2000).
11. G. Haase, E. Ogawa and J. McPherson, "Breakdown characteristics of interconnect dielectrics", IEEE-IRPS Proceedings, 466 (2005).
12. A. Berman, "Time-zero dielectric reliability test by a ramped method," IEEE-IRPS Proceedings, pp. 204-209 (1981).
13. J. W. McPherson, Jinyoung Kim, Ajit Shanware, Homi Mogul, and John Rodriguez, "Trends in the Ultimate Breakdown Strength of High Dielectric-Constant Materials", IEEE Trans. ED, Vol. 50, No. 8, pp 1771-1778 (2003).
14. J. W. McPherson, "Determination of the nature of molecular bonding in silica form time-dependent dielectric breakdown data", J. Appl. Physics, Vol. 95, 8101 (2004).
15. Junji Noguchi, Dominant Factors in TDDB Degradation of Cu Interconnects, IEEE Trans, on ED, Vol 52, No. 8, pp. 1743 -1750 (2005).
16. Z. Tokei, V. Sutcliffe, S. Demuynck, F. Lacopi, P. Roussel, G. P. Beyer, R.J.O.M. Hoorman, and K. Maex, "Impact of the barrier/dielectric interface quality on reliability of Cu porouslow-k interconnects," IEEE-IRPS Proceedings, pp. 326 - 332 (2004).
17. N. Hwang, M. C. A. Micaller-Silvestre, Chi Fo Tsang, J Y-J Su, Cheng Cheng Kuo and A. D. Trigg, "TDDB reliability assessments of 0.13 um Cu/low-k interconnects fabricated with PECVD low-k materials," IEEE-IRPS Proceedings, pp. 338 -342 (2004).
18. K.Y. Yiang, W.J. Yoo, A. Krishnamoorthy, and L.J. Tang, " Impact of buried capping layer on TDDB physics of advanced interconnects," IEEE-IRPS Proceedings, pp. 490 - 494 (2005).
19. BD is a breakdown strength.