Impact of buried capping layer on TDDB physics of advanced interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 490-494

  Yiang, K Y ^a   Yoo, W J ^a   Krishnamoorthy, Ahila ^b   Tang, L J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Buried capping layer; Interconnects; Low k; Reliability; Time dependent dielectric breakdown

Indexed keywords

BURIED CAPPING LAYER; INTERCONNECTS; LOW-K; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

COPPER; EXTRAPOLATION; INTERFACES (MATERIALS); RELIABILITY; SILICON; STRESS ANALYSIS;

INTERCONNECTION NETWORKS;

EID: 28744435065     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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