TDDB reliability assessments of 0.13 μm Cu/low-k interconnects fabricated with PECVD low-k materials

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 338-342

  Hwang, Nam ^a   Micaller Silvestre, Mary Claire A ^a   Tsang, Chi Fo ^a   Su, Jeffrey Yong Jie ^a   Kuo, Cheng Cheng ^a   Trigg, Alastair D ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Cu low k interconnect; MTTF; Reliability; TDDB; Weibull lifetime distribution

Indexed keywords

DIELECTRIC MATERIALS; EXTRAPOLATION; INTEGRATED CIRCUIT INTERCONNECTS; INTERDIFFUSION (SOLIDS); WEIBULL DISTRIBUTION;

CU/LOW-K; CU/LOW-K INTERCONNECTS; LIFE-TIME DISTRIBUTION; MTTF; RELIABILITY ASSESSMENTS; TDDB; THERMALLY INDUCED DIFFUSION; TIME DEPENDENT DIELECTRIC BREAKDOWN;

RELIABILITY;

EID: 28744435910     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315348     Document Type: Conference Paper

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