III-Nitrides growth and AlGaN/GaN heterostructures on ferroelectric materials

Materials Science and Engineering: B

Volumn 140, Issue 3, 2007, Pages 203-211

  Lee, Kyoung Keun ^a   Namkoong, Gon ^b   Madison, Shannon M ^a   Ralph, Stephen E ^a   Doolittle, W Alan ^a   Losurdo, Maria ^c   Bruno, Giovanni ^c   Cho, Hyung Koun ^d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Old Dominion University   (United States)

^c CNR   (Italy)

^d Sungkyunkwan University   (South Korea)

Author keywords

AlGaN GaN; GaN; Lithium niobate; Lithium tantalate

Indexed keywords

FERROELECTRIC MATERIALS; GALLIUM NITRIDE; LITHIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALGAN/GAN; HETEROSTRUCTURE DEVICES; LITHIUM NIOBATE; LITHIUM TANTALATE;

HETEROJUNCTIONS;

EID: 34250727190     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.04.013     Document Type: Article

References (36)

1. Ralph S.E., King M., Namkoong G., and Doolittle W.A. IEEE LEOS Annu. Meet. Conf. Proc. 2 (2003) 652
2. Madison S.M., Henderson W., Namkoong G., Patel K.M., Doolittle W.A., and Ralph S.E. IEEE Lasers Electro-Opt. Soc. (LEOS) 1 (2004) 232
3. Gon Namkoong, Lee K.-K., Madison S.M., Henderson W., Doolittle W.A., and Ralph S.E. Appl. Phys. Lett. 87 (2005) 171107
4. Bu G., Ciplys D., Shur M.S., Namkoong G., Doolittle W.A., and Hunt W.D. Appl. Phys. Lett. 85 (2004) 3313
5. Tampo H., Asahi H., Hiroki M., Asami K., and Gonda S. Phys. Stat. Sol. (b) 216 (1999) 113
6. Svaasand L.O., Eriksrud M., Nakken G., and Grande A.P. J. Cryst. Growth 22 (1974) 230
7. Commercial Crystal Modeling Program, Diamond TM Version 2.1e, copyright 1996-2001 Crystal Impact GbR, Author Klaus Brandenburg.
8. Hsu R., Maslen E.N., du Boulay D., and Ishizawa N. Acta Cryst. B53 (1997) 420
9. Prokhorov A.M., and Kuzminov Y.S. Physics and Chemistry of Crystalline Lithium Niobate (1990), Institute of Physics Publishing
10. He X., Xue D., and Kitamura K. Mater. Sci. Eng. B 120 (2005) 27
11. Gon Namkoong, Doolittle W.A., Brown A.S., Losurdo M., Capezzuto P., and Bruno G. J. Appl. Phys. 91 (2002) 2499
12. Gon Namkoong, Shawn Burnham, Lee K.-K., Elaissa Trybus, Doolittle W.A., Losurdo M., Capezzuto P., Bruno G., Nemeth B., and Nause J. Appl. Phys. Lett. 87 (2005) 184104
13. Kuznetsov A.V., Rakova E.V., Lee S.S., and Chong P.J. J. Cryst. Growth 167 (1996) 458
14. Onitsuka T., Maruyama T., Akimoto K., and Bando Y. J. Cryst. Growth 189/190 (1998) 295
15. Yeh C.-Y., Lu Z.W., Froyen S., and Zunger A. Phys. Rev. B 46 (1992) 10087
16. Cho H.K., Lee J.Y., Kim K.S., Yang G.M., Song J.H., and Yu P.W. J. Appl. Phys. 89 (2001) 2617
17. Kim Y.S., and Smith R.T. J. Appl. Phys. 40 (1969) 4637
18. Xu X., Chong T.-C., Solanki S., Liang X., and Yuan S. Opt. Mater. 26 (2004) 489
19. Leszczynski M., Suski T., Teisseyre H., Perlin P., Grzegory I., Jun J., Porowski S., and Moustakas T.D. J. Appl. Phys. 76 (1994) 4909
20. Jellison G.E., Griffiths C.O., and Holcomb D.E. Appl. Phys. Lett. 81 (2002) 1222
21. R.M.A. Azzam, N.M. Bashara, Ellipsometry and Polarized light, North Holland, Amsterdam, 1977.
22. Lee K.-K., Namkoong G., Doolittle W.A., Losurdo M., Bruno G., and Jundt D.H. J. Vac. Sci. Technol. B 24 (2006) 2093
23. Lushkin A.Y., Nazarenko V.B., Piipchak K.N., Shnyukov V.F., and Naumovets A.G. J. Phys. D: Appl. Phys. 32 (1999) 22
24. Jhans H., Honing J.M., and Rao C.N.R. J. Phys. C: Solid State Phys. 19 (1986) 3649
25. Carruthers J.R., Kaminow I.P., and Stulz L.W. Appl. Opt. 13 (1974) 2333
26. Schlarb U., Klauer S., Wesselmann M., Betzler K., and Wöhlecke M. Appl. Phys. A 56 (1993) 311
27. Webjorn J., Laurell F., and Arvidsson G. IEEE Photnonics Tech. Lett. 1 (1989) 316
28. Namkoong G., Doolittle W.A., Brown A.S., Losurdo M., Giangregorio M.M., and Bruno G. J. Cryst. Growth 252 (2003) 159
29. Shen X.Q., Ide T., Cho S.H., Shimizu M., Hara S., Okumura H., Sonoda S., and Shimizu S. J. Cryst. Growth 218 (2000) 155
30. Losurdo M., Giangregorio M., Capezzuto P., Bruno G., Namkoong G., Doolittle W., and Brown A. J. Appl. Phys. 95 (2004) 8408
31. Jones K.M., Visconti P., Yun F., Baski A.A., and Morkoc H. Appl. Phys. Lett. 78 (2001) 2497
32. Gu X., Reshchikov M.A., Teke A., Johnstone D., Morkoc H., Nemeth B., and Nause J. Appl. Phys. Lett. 84 (2004) 2268
33. Smith A.R., Feenstra R.M., Greve D.W., Shin M.-S., Skowronski M., Neugebauer J., and Northrup J.E. Appl. Phys. Lett. 72 (1998) 2114
34. Dimitrov R., Murphy M., Smart J., Schaff W., Shealy J.R., Eastman L.F., Ambacher O., and Stutzmann M. J. Appl. Phys. 87 (2000) 3375
35. Ping A.T., Chen Q., Yang J.W., Asif Khan M., and Adesida I. J. Electron. Mater. 27 (1998) 261
36. Kumar V., and Adesida I. Proceedings of the 4th IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. no. 02TH8611) D048-1 (2002)