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Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 295-300

Interface structure of GaN on sapphire (0 0 0 1) studied by transmission electron microscope

(4) Onitsuka, Tsuyoshi a Maruyama, Takahiro a Akimoto, Katsuhiro a Bando, Yoshio b

a UNIVERSITY OF TSUKUBA (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

Cubic GaN; Hexagonal GaN; Interface structure; TEM

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SAPPHIRE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032093715 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00266-8 Document Type: Article

Times cited : (11)

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