Monolithic integration of GaN electronic amplifiers with LiNbO3 optical modulators

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2003, Pages 652-653

  Ralph, Stephen E ^a   King, Mark ^a   Namkoong, Gon ^a   Doolittle, Alan ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT MODULATORS; LITHIUM NIOBATE; MONOLITHIC INTEGRATED CIRCUITS;

MONOLITHIC INTEGRATION TECHNOLOGY; PLATFORM TECHNOLOGY;

INTEGRATED OPTOELECTRONICS;

EID: 0344897619     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Alan Doolittle, Gon Namkoong, Alexander Carver, Walter Henderson, Dieter Jundt, and April Brown, "III-Nitride Growth on Lithium Niobate: A New Substrate Material for Polarity Engineering in III-Nitride Heteroepitaxy", Materials Research Society, Volume 743, p. 9-14, (2002)
2. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Auger III, E. E Haller, H. Lu, W. J. Schaff, Y. Saito and Y. Nanishi, "Unusual properties of the fundamental band gap of InN", Appl. Phys. Lett. 80, 3967 (2002)
3. E. J. Murphy, Ed., "Integrated Optical Circuits and Components: Design and Applications", New York: Marcel Dekker, Aug. (1999)
4. Taylor, F. Henry, "Enhanced Electrooptic Modulation Efficiency Utilizig Slow-Wave Optical Propagation", Journal Of LightWave Technology, Vol. 17, no. 10, p. 1875-1883 (1999)