III-nitride growth and characteristics on ferroelectric materials using plasma-assisted molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 2093-2099

  Lee, Kyoung Keun ^a   Namkoong, Gon ^a   Doolittle, W Alan ^a   Losurdo, Maria ^b   Bruno, Giovanni ^b   Jundt, Dieter H ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF BARI   (Italy)

^c Crystal Technology Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA-ASSISTED; PSEUDOEXTINCTION COEFFICIENT; PSEUDOREFRACTIVE INDEX; REPOLARIZATION; SPECTROSCOPIC ELLIPSOMETRY;

ADHESION; ANNEALING; ELLIPSOMETRY; GALLIUM NITRIDE; HEAT TREATMENT; HETEROJUNCTIONS; LITHIUM NIOBATE; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; POLARIZATION; STOICHIOMETRY;

FERROELECTRIC MATERIALS;

EID: 33746539626     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2218860     Document Type: Article

References (20)

1. S. M. Madison, W. Henderson, O. Namkoong, K. M. Patel, W. A. Doolittle, and S. E. Ralph, The 17th Annual Meeting of the IEEE Lasers and Electro-Optic Society, 7-11 November 2004 (IEEE, 2004), Vol. 1, p. 232.
2. W. A. Doolittle, G. Namkoong, A. Carver, W. Henderson, D. Jundt, and A. S. Brown, Mater. Res. Soc. Symp. Proc. 743. L1.4 (2002).
3. G. Bu, D. Ciplys, M. S. Shur. G. Namkoong, W. A. Doolittle, and W. D. Hunt, Appl. Phys. Lett. 85, 3313 (2004).
4. G. Namkoong, K.-K. Lee, S. M. Madison, W. Henderson, S. E. Ralph, and W. A. Doolittle. Appl. Phys. Lett. 87, 171107 (2005).
5. G. Namkoong, W. A. Doolittle, A. S. Brown. M. Losurdo, P. Capezzuto, and G. Bruno, J. Cryst. Growth 252, 159 (2003).
6. K. Matsubara, P. Fons, A. Yamada, M. Watanabe, and S. Niki, Thin Solid Films 347, 238 (1999).
7. R. G. Powell, N.-E. Lee, Y.-W. Kim, and J. E. Greene, J. Appl. Phys. 73, 189 (1993).
8. M. Yoshimoto, T. Maeda, T. Ohnishi, and H. Koinuma, Appl. Phys. Lett. 67, 18 (1995).
9. A. Saito, H. Matsumoto, S. Ohnisi. M. M. Akai-kasaya, Y. Kuwahara, and M. Aonom, Jpn. J. Appl. Phys., Part 1 43, 2057 (2004).
10. O. Namkoong, K.-K. Lee, S. M. Madison, W. Henderson, S. R. Ralph, S. Burnham, E. Trybus, and W. A. Doolittle (unpublished).
11. Y. Zheng, E. Shi, S. Wang, Z. Lu, S. Cui, L. Wang, and W. Zhong, Cryst. Res. Technol. 39, 387 (2004).
12. G. E. Jellison, C. O. Griffiths, and D. E. Hol comb, Appl. Phys. Lett. 81, 1222 (2002).
13. J. R. Herrington, B. Dischler, A. Rauber, and J. Schneider, Solid State Commun. 12, 351 (1973).
14. A. M. Prokhorov and Yu. S. Kuz'minov, Physics and Chemistry of Crystalline Lithium Niobate (Adam Hilger/IOP, New York. 1990).
15. A. Y. Lushkin, V. B. Nazarenko, K. N. Piipchak, V. F. Shnyukov, and A. G. Naumovets, J. Phys. D 32, 22 (1999).
16. H. Jhans, T. M. Honing, and C. N. R. Rao, J. Phys. C 19, 3649 (1986).
17. T. Suzuki, J. Cryst. Growth 163, 403 (1996).
18. M. J. Manfra, N. G. Weimann, J. W. P. Hsu, L. N. Pfeiffer, K. W. West, and S. N. G. Chu, Appl. Phys. Lett. 81, 1456 (2002).
19. K. M. Jones, P. Visconti, F. Yun, A. A. Baski, and H. Morkoc, Appl. Phys. Lett. 78, 2497 (2001).
20. J. Burm, W. Schaff, L. Eastman, H. Amano, and I. Akasaki, Appl. Phys. Lett. 68, 2849 (1996).