Monolithic integration of AlGaN/GaN-LiNbO 3 optical-electronic structures

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 2004, Pages 232-233

  Madison, Shannon M ^a   Henderson, Walter ^a   Namkoong, Gon ^a   Patel, Ketan M ^a   Doolittle, W Alan ^a   Ralph, Stephen E ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; ELECTRON CONCENTRATIONS; MACH ZEHNDER MODULATOR; MODULATION-DOPING;

CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; HETEROJUNCTIONS; LITHIUM NIOBATE; PHOTODETECTORS; PIEZOELECTRICITY; TRANSCONDUCTANCE; WAVEGUIDES;

ELECTRONIC STRUCTURE;

EID: 14244265801     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. W. A. Doolittle, G. Namkoong, A. Carver, W. Henderson, and A. Brown, "III-Nitride Growth on Lithium Niobate: A New Substrate Material for Polarity Engineering in III-Nitride Heteroepitaxy," Proceedings of Materials Research Society Fall Meeting, Boston MA, Dec. 2-6, Vol 743, L1.4, (2002).
2. W. A. Doolittle, A. Carver, G. Namkoong, and A. S. Brown, "Challenges and Potential Payoff for Crystalline Oxides in Wide Bandgap Semiconductor Technology," International Workshop on Oxide Electronics, Oct. 20-23, 2002, St. Petersburg, FL.
3. S. Nuttinck, E. Gebara, J. Laskar, M. Harris, "Development of GaN Wide Bandgap Technology for Microwave Power Applications," Microwave Magazine, IEEE, Vol. 3, March 2002, pp. 80-87.
4. CREE Lighting press release dated December 15, 2003. See www.cree.com
5. K. K. Chu, M. J. Murphy, J. Burm, W. J. Schaff, L. F. Eastman, A. Botchkarev, H. Tang, and H. Morkoc, "High Speed High Power AlGaN/GaN Heterostructure Field Effect Transistors with Improved Ohmic Contacts," IEEE/Cornell Conf. Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1997, pp. 199-200.