5GHz SAW devices based on AlN/diamond layered structure

Proceedings - IEEE Ultrasonics Symposium

Volumn 1, Issue , 2006, Pages 2293-2296

  Kirsch, P ^a   Assouar, M B ^a   Elmazria, O ^a   Alnot, P ^a  

^a UNIVERSITÉ DE LORRAINE   (France)

Author keywords

Aluminum nitride; Diamond; Electron beam lithography; High frequency; SAW

Indexed keywords

ACOUSTIC VELOCITY; ALN; ALN LAYERS; ALUMINUM NITRIDE THIN FILMS; CVD DIAMOND; DISPERSION CURVES; ELECTROMECHANICAL COUPLING COEFFICIENTS; EXPECTED VALUES; EXPERIMENTAL DATA; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HIGH FREQUENCY; HIGH INTENSITY; HIGH VELOCITY; INTERDIGITAL TRANSDUCER; LAYERED STRUCTURES; SAW DEVICE; TECHNOLOGICAL PROCESS;

ACOUSTIC SURFACE WAVE DEVICES; ALUMINUM; ALUMINUM COATINGS; ATOMIC FORCE MICROSCOPY; DIAMONDS; ELECTROMECHANICAL COUPLING; ELECTROMECHANICAL DEVICES; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; FIELD EMISSION; FIELD EMISSION MICROSCOPES; NITRIDES; SCANNING ELECTRON MICROSCOPY; ULTRASONIC TRANSDUCERS; X RAY DIFFRACTION;

ALUMINUM NITRIDE;

EID: 34547488721     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULTSYM.2006.467     Document Type: Conference Paper

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