Thermal stability of strained AlGaN/GaN heterostructures

Chinese Physics Letters

Volumn 23, Issue 7, 2006, Pages 1900-1902

  Zhang, Min ^a   Xiao, Hong Di ^a   Lin, Zhao Jun ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CAPACITANCE; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; SCHOTTKY BARRIER DIODES; TWO DIMENSIONAL ELECTRON GAS;

ALGAN/GAN HETEROSTRUCTURES; CAPACITANCE VOLTAGE MEASUREMENTS; POLARIZATION CHARGES; SCHOTTKY CONTACTS; SCHOTTKY-BARRIER HEIGHTS; SCHRODINGER AND POISSON EQUATIONS; SELF-CONSISTENT SOLUTION; SHEET DENSITY; THERMAL-ANNEALING; TWO-DIMENSIONAL ELECTRON GASES (2DEG);

THERMODYNAMIC STABILITY;

EID: 33745635360     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/7/067     Document Type: Article

References (12)

1. Wu Y F, Kapolnek D, Ibbetson J P et al 2001 IEEE Trans. Electron. Devices 48 586
2. lu W, Kumar V, Schwindt R et al 2002 IEEE Trans. Microwave Theor. Tech. 50 2499
3. Ambacher O, Foutz B, Smart J et al 2000 J. Appl. Phys. 87 334
4. Wen b, Jiang R L, Zhou J J et al 2004 Chin. Phys. Lett. 21 720
5. Feng Z H, Zhou Y G, Cai S J et al 2004 Appl. Phys. Lett. 85 5248
6. Lee J, Liu D, Kim H et al 2004 Appl. Phys. Lett. 85 2631
7. Lin Z,J Kim H, Lee J et al 2004 Appl. Phys. Lett. 84 1585
8. Fowler R H 1931 Phys. Rev. 38 45
9. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley) ch 5
10. Crowell C R, Spitzer W G, Howarth L E et al 1962 Phys. Rev. 127 2006
11. Lin Z J, Lu W, Lee J et al 2003 Appl. Phys. Lett. 82 4364
12. Lin Z J, Lu W, Lee J et al 2003 Electron. Lett. 39 1412