Growth mode of AlN epitaxial layers on 6H-SiC by plasma assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 415-418

  Ferro, Gabriel ^a   Okumura, Hajime ^a   Yoshida, Sadafumi ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON CARBIDE; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

ALUMINUM NITRIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0034140673     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00582-5     Document Type: Article

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