Reaction of molecular beam epitaxial grown AlN nucleation layers with SiC substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1500-1504

  Hoke, W E ^a   Torabi, A ^a   Hallock, R B ^a   Mosca, J J ^a   Kennedy, T D ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCOMITANT REDUCTION; MERCURY PROBE BUFFER LEAKAGE; SILICON OUTMIGRATION;

ALUMINUM NITRIDE; CAPACITANCE; LEAKAGE CURRENTS; MERCURY (METAL); MOLECULAR BEAM EPITAXY; NUCLEATION; PHASE DIAGRAMS; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33744795457     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2192539     Document Type: Article

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