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Volumn 60, Issue 4, 1999, Pages 2592-2598

Optical spectroscopy of quasimonolayer inas at the onset of quantum-dot nucleation

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EID: 0001428941     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.2592     Document Type: Article
Times cited : (43)

References (27)
  • 4
    • 85037913892 scopus 로고    scopus 로고
    • L. Samuelson, S. Anand, N. Carlsson, P. Castrillo, K. Georgsson, D. Hessman, M.-E. Pistol, C. Pryor, W. Seifert, L. R. Wallenberg, A. Carlsson, J.-O. Bovin, S. Nomura, Y. Aoyagi, T. Sugano, K. Uchida, and N. Miura, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific Singapore, 1997), p. 1269.
    • L. Samuelson, S. Anand, N. Carlsson, P. Castrillo, K. Georgsson, D. Hessman, M.-E. Pistol, C. Pryor, W. Seifert, L. R. Wallenberg, A. Carlsson, J.-O. Bovin, S. Nomura, Y. Aoyagi, T. Sugano, K. Uchida, and N. Miura, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific Singapore, 1997), p. 1269.
  • 15
    • 17144450480 scopus 로고    scopus 로고
    • Evidence that the WL thickness may not be constant throughout the sample has been provided also by PL measurements in (Formula presented) heterostructures grown by low-pressure metal-organic chemical vapor deposition; see V. Türck, F. Heinrichsdorff, M. Veit, R. Heitz, M. Grundmann, A. Krost, and D. Bimberg, Appl. Surf. Sci. 123/124, 352 (1998).
    • (1998) Appl. Surf. Sci. , vol.123-124 , pp. 352
    • Türck, V.1    Heinrichsdorff, F.2    Veit, M.3    Heitz, R.4    Grundmann, M.5    Krost, A.6    Bimberg, D.7
  • 16
    • 6444232373 scopus 로고    scopus 로고
    • Istavan Daruka and Albert-Laszlo Barabasi, Phys. Rev. Lett. 79, 3708 (1997).
    • (1997) Phys. Rev. Lett. , vol.79 , pp. 3708
  • 24
    • 85037922938 scopus 로고    scopus 로고
    • In strained nanostructures, the InAs LO phonon energy of 29.9 meV is modified by both strain and phonon confinement. A QD LO phonon energy of 32.1 meV has been predicted from the calculated strain distribution for pyramidal QD’s (Ref. 25), while phonon modes with energies of 29.6 and about 32 meV have been observed in RPL and PLE measurements on InAs QD and ascribed to phonons in the WL and in the QD, respectively (Ref. 12). Resonant PL and Raman study of InAs QD have shown, as well, the existence of 30-meV InAs LO phonons (Ref. 26). Finally, an energy of 35 meV has been estimated for interface phonons on the grounds of PL measurements (Ref. 12
    • In strained nanostructures, the InAs LO phonon energy of 29.9 meV is modified by both strain and phonon confinement. A QD LO phonon energy of 32.1 meV has been predicted from the calculated strain distribution for pyramidal QD’s (Ref. 25), while phonon modes with energies of 29.6 and about 32 meV have been observed in RPL and PLE measurements on InAs QD and ascribed to phonons in the WL and in the QD, respectively (Ref. 12). Resonant PL and Raman study of InAs QD have shown, as well, the existence of 30-meV InAs LO phonons (Ref. 26). Finally, an energy of 35 meV has been estimated for interface phonons on the grounds of PL measurements (Ref. 12).


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