-
3
-
-
0000350997
-
-
M. Grassi Alessi, M. Capizzi, A. S. Bhatti, A. Frova, F. Martelli, P. Frigeri, A. Bosacchi, and S. Franchi, Phys. Rev. B 59, 7620 (1999).
-
(1999)
Phys. Rev. B
, vol.59
, pp. 7620
-
-
Grassi Alessi, M.1
Capizzi, M.2
Bhatti, A.S.3
Frova, A.4
Martelli, F.5
Frigeri, P.6
Bosacchi, A.7
Franchi, S.8
-
4
-
-
85037913892
-
-
L. Samuelson, S. Anand, N. Carlsson, P. Castrillo, K. Georgsson, D. Hessman, M.-E. Pistol, C. Pryor, W. Seifert, L. R. Wallenberg, A. Carlsson, J.-O. Bovin, S. Nomura, Y. Aoyagi, T. Sugano, K. Uchida, and N. Miura, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific Singapore, 1997), p. 1269.
-
L. Samuelson, S. Anand, N. Carlsson, P. Castrillo, K. Georgsson, D. Hessman, M.-E. Pistol, C. Pryor, W. Seifert, L. R. Wallenberg, A. Carlsson, J.-O. Bovin, S. Nomura, Y. Aoyagi, T. Sugano, K. Uchida, and N. Miura, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific Singapore, 1997), p. 1269.
-
-
-
-
5
-
-
0000940969
-
-
A. Polimeni, A. Patané, M. Capizzi, F. Martelli, L. Nasi, and G. Salviati, Phys. Rev. B 53, R4213 (1996).
-
(1996)
Phys. Rev. B
, vol.53
, pp. R4213
-
-
Polimeni, A.1
Patané, A.2
Capizzi, M.3
Martelli, F.4
Nasi, L.5
Salviati, G.6
-
6
-
-
0000620466
-
-
B. A. Joyce, J. L. Sudijono, J. G. Belk, H. Yamaguchi, X. M. Zhang, H. T. Dobbs, A. Zangwill, D. D. Vvedensky, and T. S. Jones, Jpn. J. Appl. Phys., Part 1 36, 4111 (1997).
-
(1997)
Jpn. J. Appl. Phys., Part 1
, vol.36
, pp. 4111
-
-
Joyce, B.A.1
Sudijono, J.L.2
Belk, J.G.3
Yamaguchi, H.4
Zhang, X.M.5
Dobbs, H.T.6
Zangwill, A.7
Vvedensky, D.D.8
Jones, T.S.9
-
9
-
-
0000106209
-
-
A. Patané, M. Grassi Alessi, F. Intonti, A. Polimeni, M. Capizzi, F. Martelli, L. Nasi, L. Lazzarini, G. Salviati, A. Bosacchi, and S. Franchi, J. Appl. Phys. 83, 5529 (1998).
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 5529
-
-
Patané, A.1
Grassi Alessi, M.2
Intonti, F.3
Polimeni, A.4
Capizzi, M.5
Martelli, F.6
Nasi, L.7
Lazzarini, L.8
Salviati, G.9
Bosacchi, A.10
Franchi, S.11
-
11
-
-
0000207616
-
-
T. R. Ramachandran, R. Heitz, P. Chen, and A. Madhukar, Appl. Phys. Lett. 70, 640 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 640
-
-
Ramachandran, T.R.1
Heitz, R.2
Chen, P.3
Madhukar, A.4
-
12
-
-
0029759085
-
-
R. Heitz, M. Grundmann, N. N. Ledentsov, L. Eckey, M. Veit, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, and Zh. I. Alferov, Appl. Phys. Lett. 68, 361 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 361
-
-
Heitz, R.1
Grundmann, M.2
Ledentsov, N.N.3
Eckey, L.4
Veit, M.5
Bimberg, D.6
Ustinov, V.M.7
Yu. Egorov, A.8
Zhukov, A.E.9
Kop’ev, P.S.10
Alferov, Z.I.11
-
13
-
-
0031276398
-
-
A. Patané, M. Grassi Alessi, F. Intonti, A. Polimeni, M. Capizzi, F. Martelli, M. Geddo, A. Bosacchi, and S. Franchi, Phys. Status Solidi A 164, 493 (1997).
-
(1997)
Phys. Status Solidi A
, vol.164
, pp. 493
-
-
Patané, A.1
Grassi Alessi, M.2
Intonti, F.3
Polimeni, A.4
Capizzi, M.5
Martelli, F.6
Geddo, M.7
Bosacchi, A.8
Franchi, S.9
-
14
-
-
0031703253
-
-
D. I. Westwood, Z. Sobiesierski, E. Steimetz, T. Zettler, and W. Richter, Appl. Surf. Sci. 123/124, 347 (1998).
-
(1998)
Appl. Surf. Sci.
, vol.123-124
, pp. 347
-
-
Westwood, D.I.1
Sobiesierski, Z.2
Steimetz, E.3
Zettler, T.4
Richter, W.5
-
15
-
-
17144450480
-
-
Evidence that the WL thickness may not be constant throughout the sample has been provided also by PL measurements in (Formula presented) heterostructures grown by low-pressure metal-organic chemical vapor deposition; see V. Türck, F. Heinrichsdorff, M. Veit, R. Heitz, M. Grundmann, A. Krost, and D. Bimberg, Appl. Surf. Sci. 123/124, 352 (1998).
-
(1998)
Appl. Surf. Sci.
, vol.123-124
, pp. 352
-
-
Türck, V.1
Heinrichsdorff, F.2
Veit, M.3
Heitz, R.4
Grundmann, M.5
Krost, A.6
Bimberg, D.7
-
16
-
-
6444232373
-
-
Istavan Daruka and Albert-Laszlo Barabasi, Phys. Rev. Lett. 79, 3708 (1997).
-
(1997)
Phys. Rev. Lett.
, vol.79
, pp. 3708
-
-
-
17
-
-
0001627890
-
-
R. Heitz, T. R. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen, and A. Madhukar, Phys. Rev. Lett. 78, 4071 (1997).
-
(1997)
Phys. Rev. Lett.
, vol.78
, pp. 4071
-
-
Heitz, R.1
Ramachandran, T.R.2
Kalburge, A.3
Xie, Q.4
Mukhametzhanov, I.5
Chen, P.6
Madhukar, A.7
-
18
-
-
0031677714
-
-
A. Madhukar, T. R. Ramachandran, A. Konkar, I. Mukhametzhanov, W. Yu, and P. Chen, Appl. Surf. Sci. 123/124, 266 (1998).
-
(1998)
Appl. Surf. Sci.
, vol.123-124
, pp. 266
-
-
Madhukar, A.1
Ramachandran, T.R.2
Konkar, A.3
Mukhametzhanov, I.4
Yu, W.5
Chen, P.6
-
19
-
-
0028515009
-
-
S. Fafard, D. Leonard, J. L. Merz, and P. M. Petroff, Appl. Phys. Lett. 65, 1388 (1994).
-
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 1388
-
-
Fafard, S.1
Leonard, D.2
Merz, J.L.3
Petroff, P.M.4
-
20
-
-
25544468933
-
-
S. Fafard, R. Leon, D. Leonard, J. L. Merz, and P. M. Petroff, Phys. Rev. B 52, 5752 (1995).
-
(1995)
Phys. Rev. B
, vol.52
, pp. 5752
-
-
Fafard, S.1
Leon, R.2
Leonard, D.3
Merz, J.L.4
Petroff, P.M.5
-
21
-
-
0001215962
-
-
K. H. Schmidt, G. Medeiros-Ribeiro, M. Oestrich, P. M. Petroff, and G. H. Döhler, Phys. Rev. B 54, 11 346 (1996).
-
(1996)
Phys. Rev. B
, vol.54
, pp. 11 346
-
-
Schmidt, K.H.1
Medeiros-Ribeiro, G.2
Oestrich, M.3
Petroff, P.M.4
Döhler, G.H.5
-
22
-
-
0031560893
-
-
M. Colocci, F. Bogani, L. Carraresi, R. Mattolini, A. Bosacchi, S. Franchi, P. Frigeri, M. Rosa-Clot, and S. Taddei, Appl. Phys. Lett. 70, 3140 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 3140
-
-
Colocci, M.1
Bogani, F.2
Carraresi, L.3
Mattolini, R.4
Bosacchi, A.5
Franchi, S.6
Frigeri, P.7
Rosa-Clot, M.8
Taddei, S.9
-
23
-
-
0001974717
-
-
P. M. Petroff, K. H. Schmidt, G. Medeiros Ribeiro, A. Lorke, and J. Kotthaus, Jpn. J. Appl. Phys., Part 1 36, 4068 (1997).
-
(1997)
Jpn. J. Appl. Phys., Part 1
, vol.36
, pp. 4068
-
-
Petroff, P.M.1
Schmidt, K.H.2
Medeiros Ribeiro, G.3
Lorke, A.4
Kotthaus, J.5
-
24
-
-
85037922938
-
-
In strained nanostructures, the InAs LO phonon energy of 29.9 meV is modified by both strain and phonon confinement. A QD LO phonon energy of 32.1 meV has been predicted from the calculated strain distribution for pyramidal QD’s (Ref. 25), while phonon modes with energies of 29.6 and about 32 meV have been observed in RPL and PLE measurements on InAs QD and ascribed to phonons in the WL and in the QD, respectively (Ref. 12). Resonant PL and Raman study of InAs QD have shown, as well, the existence of 30-meV InAs LO phonons (Ref. 26). Finally, an energy of 35 meV has been estimated for interface phonons on the grounds of PL measurements (Ref. 12
-
In strained nanostructures, the InAs LO phonon energy of 29.9 meV is modified by both strain and phonon confinement. A QD LO phonon energy of 32.1 meV has been predicted from the calculated strain distribution for pyramidal QD’s (Ref. 25), while phonon modes with energies of 29.6 and about 32 meV have been observed in RPL and PLE measurements on InAs QD and ascribed to phonons in the WL and in the QD, respectively (Ref. 12). Resonant PL and Raman study of InAs QD have shown, as well, the existence of 30-meV InAs LO phonons (Ref. 26). Finally, an energy of 35 meV has been estimated for interface phonons on the grounds of PL measurements (Ref. 12).
-
-
-
-
26
-
-
51249167289
-
-
J.-Y. Marzin, J.-M. Gerard, O. Cabrol, B. Jusserand, and B. Sermage, Nuovo Cimento D 17, 1285 (1995).
-
(1995)
Nuovo Cimento D
, vol.17
, pp. 1285
-
-
Cabrol, O.1
Jusserand, B.2
Sermage, B.3
|