InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at 1.3 μm

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 127-128

  Jang, Y D ^a   Yim, J S ^a   Lee, U H ^a   Lee, D ^a   Jang, J W ^b   Park, K H ^b   Jeong, W G ^b   Lee, J H ^c   Oh, D K ^c  

^a Chungnam National University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Laser diode; Nitrogen; Quantum dot

Indexed keywords

CRYSTALS; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

EXCITATION POWER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037391404     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00744-0     Document Type: Conference Paper

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