Contactless electroreflectance and photoluminescence of InAs quantum dots with GaInNAs barriers grown on GaAs substrate

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 2, 2007, Pages 625-627

  Mdotyka, M ^a   Kudrawiec, R ^a   Misiewicz, J ^a   Pucicki, D ^a   Tlaczala, M ^a   Fischer, M ^b   Marquardt, B ^b   Forchel, A ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACTLESS ELECTROREFLECTANCE; EMISSION WAVE LENGTH; GAAS SUBSTRATES; GAINNAS; GROUND-STATE; INAS QUANTUM DOTS; INTERNATIONAL CONFERENCES; NANO-DEVICES; OPTICAL-; PHOTOLUMINESCENCE (PL); PL SPECTRUM; SELF-ORGANIZED;

CRYSTAL GROWTH; EMISSION CONTROL; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM ARSENIDE; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34249903412     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200673306     Document Type: Conference Paper

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