Wetting layer states of InAs/GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer

Journal of Applied Physics

Volumn 101, Issue 6, 2007, Pages

  Sek G ^a   Ryczko, K ^a   Motyka, M ^a   Andrzejewski, J ^a   Wysocka, K ^a   Misiewicz, J ^a   Li, L H ^b   Fiore, A ^b,d   Patriarche, G ^c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b EPFL   (Switzerland)

^c CNRS   (France)

^d IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTICAL TRANSITIONS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; WETTING;

INTERMIXING; MASS ENVELOPE FUNCTION; OPTICAL TRANSITION ENERGIES; WETTING LAYER (WL) STATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34047175878     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2711146     Document Type: Article

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