Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 1044-1048

  Simmonds, P J ^a   Beere, H E ^a   Li, H W ^b   See, P ^b   Shields, A J ^b   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM PHOSPHIDE; LATTICE VIBRATIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

BUFFER MATERIALS; DEPOSITION THICKNESS; PEAK EMISSION WAVELENGTH; SELF-ASSEMBLED INAS QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34249871888     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2731334     Document Type: Article

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