In situ XPS investigation of indium surface segregation for Ga1-xInxAs and Al1-xInxAs alloys grown by MBE on InP(001)

Surface Science

Volumn 352-354, Issue , 1996, Pages 734-739

  Grenet, G ^a,b   Bergignat, E ^a   Gendry, M ^a   Lapeyrade, M ^a   Hollinger, G ^a  

^a ECOLE CENTRALE DE LYON   (France)

^b INST DE RECHERCHES SUR LA CATALYSE   (France)

Author keywords

Angle resolved photoemission; Surface segregation

Indexed keywords

ALUMINUM ALLOYS; GALLIUM ALLOYS; IN SITU PROCESSING; MOLECULAR BEAM EPITAXY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; SURFACE PHENOMENA; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM INDIUM ARSENIDE; GALLIUM INDIUM ARSENIDE; SURFACE SEGREGATION; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING INDIUM;

EID: 0030148839     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01246-X     Document Type: Article

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