Growth of InAs/InP(0 0 1) nanostructures: The transition from quantum wires to quantum dots

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 131-135

  Parry, H J ^a   Ashwin, M J ^a   Neave, J H ^a   Jones, T S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

A1. Diffusion; A1. Nanostructures; A1. Nucleation; A1. Surface process; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; DEPOSITION; DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

GROWTH CONDITIONS; SEMICONDUCTING III-V MATERIALS; SURFACE PROCESSES; WAVELENGTHS;

NANOSTRUCTURED MATERIALS;

EID: 18444376199     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.100     Document Type: Conference Paper

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