Emission wavelength engineering of InAs/InP(001) quantum wires

European Physical Journal B

Volumn 40, Issue 4, 2004, Pages 433-437

  Fuster, D ^a   Gonzalez L ^a   Gonzalez Y ^a   Martinez Pastor J ^b   Ben, T ^c   Ponce, A ^c   Molina, S I ^c  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b UNIVERSITY OF VALENCIA   (Spain)

^c UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; NANOSTRUCTURED MATERIALS; PARAMETER ESTIMATION; QUENCHING; SELF ASSEMBLY; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

BUFFER LAYERS; PLANAR SURFACES; ROOM TEMPERATURE (RT); WAVELENGTHS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 6344235525     PISSN: 14346028     EISSN: None     Source Type: Journal    
DOI: 10.1140/epjb/e2004-00228-4     Document Type: Article

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