A simple route to ultra long SiC nanowires

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 2, 2007, Pages 580-583

  Cai, K F ^a   Lei, Q ^a   Zhang, A X ^a  

^a TONGJI UNIVERSITY   (China)

Author keywords

Crystal growth; Hexamethyldisilane; Nanostructures; Pyrolysis; SiC nanowires

Indexed keywords

FORMATION MECHANISMS; HEXAMETHYLDISILANE (HMDS); SIC NANOWIRES;

ARGON; CHEMICAL REACTIONS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SILICON CARBIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC WIRE;

ARGON; INORGANIC COMPOUND; NANOMATERIAL; NANOWIRE; SILANE DERIVATIVE; SILICON CARBIDE; SILICON DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTRON PROBE MICROANALYSIS; EQUIPMENT DESIGN; HEAT; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ULTRASTRUCTURE;

ARGON; CARBON COMPOUNDS, INORGANIC; ELECTRON PROBE MICROANALYSIS; EQUIPMENT DESIGN; HEAT; MICROSCOPY, ELECTRON, SCANNING; MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; NANOTECHNOLOGY; NANOWIRES; SILANES; SILICON COMPOUNDS;

EID: 34249862343     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2007.143     Document Type: Article

References (35)

1. I. A. Salama, N. R. Quick, and A. Kar, J. Appl. Phys. 93, 9275 (2003).
2. J. A. Powell, L. G. Matus, and M. A. Kuczmarski, J. Electrochem. Soc. 134, 1558 (1987).
3. L. Wang, H. Wada, and L. F. Allard, J. Mater. Res. 7, 148 (1992).
4. J. V. Milewski, F. D. Gac, J. J. Petrovic, and S. R. Skaggs, J. Mater. Sci. 20, 1160 (1985).
5. E. W. Wong, P. E. Sheehan, and C. M. Lieber, Science 277, 1971 (1997).
6. W. S. Shi, Y. F. Zheng, H. Y. Peng, N. Wang, C. S. Lee, and S. T. Lee, J. Am. Ceram. Soc. 83, 3228 (2000).
7. Y. B. Li, S. S. Xie, X. P. Zou, D. S. Tang, Z. Q. Liu, W. Y. Zhou, and G. Wang, J. Cryst. Growth 223, 125 (2001).
8. H. M. Cheng, F. Li, G. Su, H. Y. Pan, L. L. He, X. Sun, and M. S. Dresselhaus, Appl. Phys. Lett. 72, 3282 (1998).
9. Y. J. Zhang, N. L. Wang, R. R. He, X. H. Chen, and J. Zhu, Solid State Commun. 118, 595 (2001).
10. G. W. Ho, A. S. W. Wong, A. T. S. Wee, and M. E. Weiland, Nano Lett. 4, 2023 (2004).
11. Z. W. Pan, H. L. Lai, F. C. Au, X. F. Duan, W. Y. Zhou, W. S. Shi, N. Wang, C. S. Lee, N. B. Wong, S. T. Lee, and S. S. Xie, Adv. Mater. 12, 1186 (2000).
12. H. Dai, E. Wang, Y. Lu, S. S. Fan, and C. M. Lieber, Nature 375, 769 (1995).
13. C. C. Tang, S. S. Fan, H. Y. Dang, J. H. Zhao, C. Zhang, P. Li, and Q. Gu, J. Cryst. Growth 210, 595 (2000).
14. X. H. Sun, C. P. Li, W. K. Wong, N. B. Wong, C. S. Lee, S. T. Lee, and B. K. Teo, J. Am. Chem. Soc. 124, 14464 (2002).
15. W. Q. Han, S. S. Fan, Q. Li, W. J. Liang, B. L. Gu, and D. P. Yu, Chem. Phys. Lett. 265, 374 (1997).
16. G. W. Meng, L. D. Zhang, C. M. Mo, S. Y. Zhang, Y. Qin, S. P. Feng, and H. J. Li, J. Mater. Res. 13, 2533 (1998).
17. J. Q. Hu, Q. Y. Lu, K. B. Tang, B. Deng, R. R. Jiang, Y. T. Qian, W. C. Yu, G. E. Zhou, X. M. Liu, and J. X. Wu, J. Phys. Chem. B 104, 5251 (2000).
18. G. Xi, Y. Peng, S. Wan, T. Li, W. Yu, and Y. T. Qian, J. Phys. Chem. B 108, 20102 (2004).
19. K. F. Cai, Q. Lei, and L. C. Zhang, J. Nanosci. Nanotechnol. 5, 1925 (2005).
20. (a) H. T. Chiu and J. S. Hsu, Thin Solid Films 252, 13 (1994);
21. (b) I. Kieps, F. Caccavale, G. Brusatin, A. Angelescu, and L. Armelao, Vacuum 46, 979 (1995);
22. (c) H. Anma, J. Toki, T. Ikeda, and Y. Hatanaka, Vacuum 59, 665 (2000);
23. (d) K. Teker, J. Cryst. Growth 257, 245 (2003);
24. (e) H. Anma, Y. Yoshimoto, M. Warashina, and Y. Hatanaka, Appl. Surf. Sci. 175-176, 484 (2001);
25. (f) J. Seekamp, J. Niemann, and W. Bauhofer, J. Non-Cryst. Solids 266-269, 704 (2000);
26. (g) Y. Chen, K. Matsumoto, Y. Nishio, T. Shirafuji, and S. Nishino, Mater. Sci. Eng. B 61-62, 579 (1999);
27. (h) T. Takeuchi, M. Tanaka, T. Matsutani, and M. Kiuchi, Surf. Coat. Technol. 158-159, 408 (2002);
28. (i) K. Teker, C. Jacob, J. Chumg, and M. H. Hong, Thin Solid Films 371, 53 (2000);
29. (j) Y. Y. Xu, T. Muramatsu, M. Taniyama, T. Aoki, and Y. Hatanaka, Thin Solid Films 368, 181 (2000).
30. Y. Liang, F. Zheng, Q. Xian, and R. Zhou, Powder Technol. 137, 29 (2003).
31. K. Koumoto, S. Takeda, C. Pai, T. Sata, and H. Yanagida, J. Am. Ceram. Soc. 72, 1985 (1989).
32. H. Drost, M. Friedrich, R. Mohr, and E. Gey, Nucl. Instrum. Meth. Phys. Res., Sect. B 122, 598 (1997).
33. (a) P. Yang and C. M. Lieber, Science 273, 1836 (1996);
34. (b) P. Yang and C. M. Lieber, J. Mater. Res. 12, 2981 (1997).
35. Y. Li, Y. Liang, F. Zheng, and Z. Q. Hu, Mater. Sci. Eng. A 174, L23 (1994).