Ionization of hexamethyldisilane for SiC deposition

Surface and Coatings Technology

Volumn 158-159, Issue , 2002, Pages 408-411

  Takeuchi, Takae ^a   Tanaka, Motoko ^a   Matsutani, Takaomi ^b   Kiuchi, Masato ^b  

^a NARA WOMEN'S UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

El mass spectra; Fragmentation; Ion beam induced CVD; Organosilicon; Silicon carbide

Indexed keywords

DEPOSITION; ELECTRONS; ION BEAMS; MASS SPECTROMETRY; POSITIVE IONS;

FRAGMENTATION;

SILICON CARBIDE;

SILICON CARBIDE;

EID: 0036397147     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(02)00261-X     Document Type: Article

References (5)