Ultra long SiC/SiO 2 core-shell nanocables from organic precursor

Journal of Nanoscience and Nanotechnology

Volumn 5, Issue 11, 2005, Pages 1925-1928

  Cai, K F ^a   Lei, Q ^a   Zhang, L C ^a  

^a TONGJI UNIVERSITY   (China)

Author keywords

Chemical vapor deposition; Crystal growth; Nanocables; Nanostructures; Poly(dimethyl siloxane); Pyrolysis; SiC; SiO 2

Indexed keywords

CORE-SHELL NANOCABLES; ORGANIC PRECURSORS; POLY(DIMETHYL SILOXANE);

AMORPHOUS SILICON; ARGON; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ELECTRIC CABLES; PHOTOLUMINESCENCE; PYROLYSIS; SILICA; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

ARGON; BAYSILON; BIOMATERIAL; DIMETICONE; INORGANIC COMPOUND; NANOMATERIAL; NANOTUBE; SILICON CARBIDE; SILICON DERIVATIVE; SILICON DIOXIDE; SILICONE DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; CRYSTALLIZATION; GAS; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY; X RAY DIFFRACTION;

ARGON; CARBON COMPOUNDS, INORGANIC; COATED MATERIALS, BIOCOMPATIBLE; CRYSTALLIZATION; CRYSTALLOGRAPHY, X-RAY; DIMETHYLPOLYSILOXANES; GASES; MATERIALS TESTING; MICROSCOPY, ELECTRON, TRANSMISSION; MODELS, CHEMICAL; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SILICON COMPOUNDS; SILICON DIOXIDE; SILICONES; X-RAY DIFFRACTION;

EID: 33646130174     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2005.430     Document Type: Article

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