Compositional study of copper-germanium Ohmic contact to n-GaN

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 420-425

  Schuette, Michael L ^a   Lu, Wu ^a  

^a The Ohio State University   (United States)

Author keywords

Cu Ge thin films; GaN; Ohmic contact

Indexed keywords

CONTACT RESISTIVITY; LINEAR CURRENT-VOLTAGE; LOW-TEMPERATURE ALLOYING; PREMETALLIZATION;

COPPER COMPOUNDS; DEPTH PROFILING; GALLIUM NITRIDE; GERMANIUM COMPOUNDS; INTERFACES (MATERIALS); REACTIVE ION ETCHING;

OHMIC CONTACTS;

EID: 34249110760     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0073-5     Document Type: Conference Paper

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