Investigation of gate current in nano-scale MOSFETs by Monte Carlo solution of quantum Boltzmann equation

Chinese Physics

Volumn 16, Issue 2, 2007, Pages 537-541

  Xia, Zhi Liang ^a   Du, Gang ^a   Liu, Xiao Yan ^a   Kang, Jin Feng ^a   Han, Ru Qi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Metal oxide semiconductor field effect transistor; Monte Carlo; Quantum effect; Tunnelling

Indexed keywords

BOLTZMANN EQUATION; ELECTRON TUNNELING; MONTE CARLO METHODS; THERMIONIC EMISSION;

ENERGY DISTRIBUTION; GATE TUNNELLING CURRENT; NON-EQUILIBRIUM TRANSPORT; QUANTUM EFFECTS;

MOSFET DEVICES;

EID: 34249088683     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/16/2/042     Document Type: Article

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