Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

Chinese Physics

Volumn 15, Issue 1, 2006, Pages 177-181

  Du, Gang ^a   Liu, Xiao Yan ^a   Han, Ru Qi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Carrier transport; Monte Carlo method; Quantum mechanical effect; Semiconductor device

Indexed keywords

COMPUTER SIMULATION; DATA ACQUISITION; MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTOR DEVICES;

CARRIER TRANSPORT; QUANTUM MECHANICAL EFFECT; TUNNELLING EFFECT;

QUANTUM THEORY;

EID: 32644465437     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/15/1/028     Document Type: Article

References (11)

1. Haug H and Jauho A P 1998 Quantum Kinetics in Transport and Optics of Semiconductors (New York: Springer)
2. Hansch W 1991 The Drift Diffusion Equation and Its Applications in MOSFET Modeling (New York: Springer)
3. Tsuchiya H and Miyoshi T 1999 IEICE Trans. Electron E82-C 880
4. Register L F and Hess K 1999 Microelectronic Engineering 47 353
5. Jauho A P and Reggiani L 1988 Solid State Electron. 31 535
6. Jacoboni C and Reggiani L 1983 Rev. Mod. Phys. 55 645
7. Jacoboni C and Lugli P 1989 The Monte Carlo Method for Semiconductor Device Simulation (Wien: Springer)
8. Jungemann C, Keith S, Bartels M and Meinerzhagen B 1999 IEICE Trans. Electron E82-C 870
9. Takagi S, Toriumi A, Iwase M and Tango H 1994 IEEE Trans. Electron Devices 41 2357
10. Uchida K, Watanabe H, Koga J, Kinoshita A and Takagi S 2003 International Conference on Simulation of Semiconductor Processes and Devices pp8-13
11. Liu H X, Hao Y and Hawkins I D 2005 Chin. Phys. 14 1644