On the tunneling energy within the full-band structure approach

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2005, Issue , 2005, Pages 155-158

  Bufler, F M ^a,b   Schenk, A ^a,b  

^a ETH ZURICH   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTATIONAL METHODS; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FLASH MEMORY; GATES (TRANSISTOR);

COLD ELECTRONS; TUNNELING ENERGY;

ELECTRONS;

EID: 33845888510     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.2005.201496     Document Type: Conference Paper

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