Demonstration of short-channel self-aligned Pt2Si-FUSI pMOSFETs with low threshold voltage (-0.29 V) on SiON and HfSiON

IEEE Electron Device Letters

Volumn 27, Issue 8, 2006, Pages 665-667

  van Dal, Mark J H ^a   Boccardi, G ^a   Veloso, A ^b   Locorotondo, S ^b   Shi, X ^b   Demeurisse, C ^b   Vrancken, C ^b   Verbeeck, R ^b   Lauwers, A ^b   Kittl, J A ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IMEC   (Belgium)

Author keywords

Full silicidation (FUSI); HfSiON dielectric; High k; Metal gate; Ni31Si12; NiSi; Pt2Si; PtSi; SiON dielectric; Threshold voltage; Work function

Indexed keywords

ELECTRIC CHARGE; GATES (TRANSISTOR); PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

FULL SILICIDATION (FUSI); HIGH-K DIELECTRIC; LOW THRESHOLD VOLTAGE; SELF-ALLIGNED PROCESS;

MOSFET DEVICES;

EID: 33746517461     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.878051     Document Type: Article

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