4H-SiC bipolar junction transistor with high current and power density

Solid-State Electronics

Volumn 47, Issue 2, 2003, Pages 229-231

  Perez Wurfl, I ^a   Krutsinger, R ^b   Torvik, J T ^a,b   Van Zeghbroeck, B ^a  

^a UCB 450   (United States)

^b Astralux Inc   (United States)

Author keywords

BJT; High current; High power; SiC; Temperature dependence

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC LOSSES; SILICON CARBIDE; THERMAL EFFECTS;

BIPOLAR JUNCTION TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0037290261     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00199-5     Document Type: Conference Paper

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