SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 7, 2001, Pages 4496-4500

Fully quantum-mechanical modeling of tunneling current in ultrathin gate oxide metal-oxide-semiconductor devices

(1) Iwata, H a

a TOYAMA PREFECTURAL UNIVERSITY (Japan)

Author keywords

MOSFET; Quantum mechanical effect; Self consistent modeling; Tunneling current; Ultrathin gate oxide

Indexed keywords

BOUNDARY CONDITIONS; CURRENT DENSITY; ELECTRON TUNNELING; GATES (TRANSISTOR); MATHEMATICAL MODELS; PERTURBATION TECHNIQUES; POISSON EQUATION; ULTRATHIN FILMS;

TUNNELING CURRENTS;

MOSFET DEVICES;

EID: 0035388345 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.4496 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.