Study of a novel Si/SiC hetero-junction MOSFET

Solid-State Electronics

Volumn 51, Issue 5, 2007, Pages 662-666

  Chen, L ^a   Guy, O J ^a   Jennings, M R ^a   Igic, P ^a   Wilks, S P ^a   Mawby, P A ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Hetero junction; MOSFET; Si; SiC

Indexed keywords

ELECTRIC BREAKDOWN; EPITAXIAL LAYERS; HETEROJUNCTIONS; MATHEMATICAL MODELS; SILICON CARBIDE; SUBSTRATES;

HETEROJUNCTION MOSFET STRUCTURE; SILICON LAYERS; THIN EPITAXIAL LAYER;

MOSFET DEVICES;

EID: 34248544954     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.026     Document Type: Article

References (21)

1. Shenai K., Scott R.S., and Baliga B.J. Optimum semiconductors for high-power electronics. IEEE Trans Electron Devices 36 9 (1989) 1811-1823
2. Neudeck P.G. Progress in silicon carbide semiconductor electronics technology. J Electron Mater 24 (1995) 283
3. Palmour JW, Singh R, Glass RC, Kordina O, Carter Jr CH. Silicon carbide for power devices. In: ISPSD; 1997. p. 25-32.
4. Casady J.B., and Jonson R.W. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review. Solid-State Electron 39 10 (1996) 1409-1422
5. Bhatnagar M., and Baliga B.J. Comparison of 6H-SiC, 3C-SiC and Si for power devices. IEEE Trans Electron Devices 40 3 (1993) 645-655
6. Baliga B.J. Power semiconductor device figure of merit for high-frequency applications. IEEE Electron Device Lett 10 (1989) 455-457
7. Chung G.Y., Williams J.R., Tin C.C., McDonald K., Farmer D., Chanana R.K., et al. Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation. Appl Surf Sci 184 (2001) 399-403
8. 2/SiC interfaces. Microelectron Eng 48 (1999) 241-248
9. Schorner R., Friedrichs F., Peters D., and Stephani D. Significantly improved performance of MOSFET's on silicon carbide using the 15R-SiC polytype. IEEE Electron Device Lett 20 (1999) 241-244
10. 2/4H-SiC MOS devices. Mater Sci Forum 338 (2000) 1060-1072
11. 2 interface. Phys Status Solidi A 162 (1997) 339-368
12. Kimoto T, Kawano H, and Suda J. 1200 V-class 4H-SiC RESURF MOSFETs with low on-resistances. In: Paper presented at the ISPSD conference, Santa Barbra, CA, May 2005. pp. 23-6.
13. 2, 2 kV power DMOSFETs in 4H-SiC. In: Proceedings of the 17th international symposium on power semiconductor devices and IC's May, 2005, Santa Barbara, CA, USA. pp. 23-6.
14. 2 4H-SiC power DMOSFETs. IEEE Electron Device Lett 25 8 (2004)
15. Ryu S, Krishnaswami S, Agarwal A, Richmond J, Palmour J. Development of 10 kV 4H-SiC power DMOSFETs. In: Paper presented at the ICSCRM conference, Lyon France, October 5-10 2003.
16. Lu C.Y., Cooper Jr. J.A., Chung G.Y., and Williams J.R. Mater Sci Forum 389-393 (2002) 977
17. TCAD Studio is a Semiconductor Device Modelling and Circuit Simulation Program. Available from: http://www.esemi.com.
18. 2/Si interface structures formed by three kinds of atomic oxygen at 300 °C. Appl Phys Lett 84 19 (2004) 3756-3758
19. Konstantinov A.O., Wahab Q., Nordell N., and Lindefelt U. Ionization rates and critical fields in 4H silicon carbide. Appl Phys Lett 71 1 (1997) 90-92
20. Mihaila A., Udrea F., Brezeanu G., and Amaratunga G. A numerical comparison between MOS control and junction control high voltage devices in SiC technology. Solid-State Electron 47 4 (2003) 607-615
21. Xia Z., Du G., Liu X., Kang J., and Han R. Carrier effective mobilities in germanium MOSFET inversion layer investigated by Monte Carlo simulation. Solid-State Electron 49 12 (2005) 1942-1946