Carrier effective mobilities in germanium MOSFET inversion layer investigated by Monte Carlo simulation

Solid-State Electronics

Volumn 49, Issue 12, 2005, Pages 1942-1946

  Xia, Zhiliang ^a   Du, Gang ^a   Liu, Xiaoyan ^a   Kang, Jinfeng ^a   Han, Ruqi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Effective mobility; Germanium; Monte Carlo

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CONCENTRATION (PROCESS); GERMANIUM; MONTE CARLO METHODS; MOSFET DEVICES;

EFFECTIVE MOBILITY; IMPURITY CONCENTRATION; MONTE CARLO; UNIVERSAL BEHAVIOR;

ELECTRON MOBILITY;

EID: 28044470539     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.08.010     Document Type: Article

References (21)

1. C.O. Chui, H. Kim, D. Chi, and B.B. Triplett A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/dielectric and metal gate IEDM Tech Dig 2002 437
2. H. Shang, H.O. Schmidt, K.K. Chan, and M. Copel High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric IEDM Tech Dig 2002 441
3. H. Shang, K.L. Lee, P. Kozlowski, and C. D'Emic Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate IEEE Electron Dev Lett 25 2004 135 137
4. J.J. Rosenberg, and S.C. Martin Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator IEEE Electron Dev Lett 9 1988 639 640
5. S.C. Martin, L.M. Hitt, and J.J. Rosenberg p-Channel germanium MOSFETs with high channel mobility IEEE Electron Dev Lett 10 1989 325 326
6. A.G. Sabnis, and J.T. Clemens Characterization of the electron mobility in the inverted 〈100〉 Si surface IEDM Tech Digest 1979 18 21
7. S.C. Sun, and J.D. Plummer Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces IEEE Trans Electron Dev ED-27 1994 1497 1508
8. N.D. Arora, and G.S. Gildenblat A Semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation IEEE Trans Electron Dev ED-34 1987 89 93
9. H.S. Wong Universal effective mobility of empirical local mobility models for n- and p-channel silicon MOSFETs Solid-State Electron 36 1993 179 188
10. K. Lee, J.S. Choi, S.P. Sim, and C.K. Kim Physical understanding of low-field carrier mobility in silicon MOSFET inversion layer IEEE Trans Electron Dev ED-38 1991 1905 1912
11. S. Takagi, M. Iwase, and A. Toriumi On the universality of inversion-layer mobility in N- and P-channel MOSFET's IEDM Tech Dig 88 1988 398 401
12. F.M. Bufler, C. Zechner, A. Schenk, and W. Fichtner Self-consistent single-particle simulation SISPAD 2002 159 162
13. J.R. Chelikowsky, and M.L. Cohen Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors Phys Rev B 14 1976 556
14. Carlo Jacoboni, and L. Reggiani The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials Rev Mod Phys 55 3 1983 645
15. Phuong Hoa Nguyen, and Karl R Hofmann Comparative full-band Monte Carlo study of Si and Ge with screened pseudopotential-based phonon scattering rates J Appl Phys 94 2003 376
16. F.M. Bufler, Y. Asahi, H. Yoshimura, and C. Zechner Monte Carlo simulation and measurement of nanoscale n-MOSFETs IEEE Trans Electron Dev 50 2 2003 418
17. S.M. Sze Physics of semiconductor devices 1985 John Wiley & Sons, Inc.
18. S.-i. Takagi, A. Toriumi, M. Iwase, and H. Tango On the universality of inversion layer mobility in Si MOSFET's: Part I-Effects of substrate impurity concentration IEEE Trans Electron Dev 41 1994 2357 2362
19. F. Gamiz, J.A. Lopez-Villanueva, J. Banqueri, and J.E. Carceller Universality of electron mobility curves in MOSFETs: a Monte Carlo study IEEE Trans Electron Dev 42 1995 258 265
20. F. Gamiz, J.A. Lopez-Villanueva, J. Banqueri, and J.E. Carceller Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's IEEE Trans Electron Dev 45 1998 1122 1125
21. M.V. Fischetti, and S.E. Laux Monte Carlo study of electron transport in silicon inversion layers Phys Rev B48 1993 2244