Extended X-ray absorption fine structure studies of GaN epilayers doped with Er

Optical Materials

Volumn 28, Issue 6-7, 2006, Pages 785-789

  Katchkanov, V ^a,b   Mosselmans, J F W ^b   O'Donnell, K P ^a   Nogales, E ^a   Hernandez, S ^a   Martin, R W ^a   Steckl, A ^c   Lee, D S ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

^c University of Cincinnati   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ERBIUM; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; X RAY ANALYSIS;

ER-RICH CLUSTERS; EXTENDED X-RAY ABSORPTION FINE STRUCTURE (EXAFS);

GALLIUM NITRIDE;

EID: 33644891044     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2005.09.023     Document Type: Conference Paper

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