EXAFS studies of plasma-enhanced MBE grown Group III-Nitrides

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 38-41

  Blant, A V ^a   Cheng, T S ^a   Jeffs, N J ^a   Foxon, C T ^a   Bailey, C ^a   Harrison, P G ^a   Dent, A J ^b   Mosselmans, J F W ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

Author keywords

EXAFS studies; Group III Nitrides; Molecular beam epitaxy

Indexed keywords

MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SUBSTRATES;

PLASMA ENHANCED MOLECULAR BEAM EPITAXY; VEGARD'S LAW; X RAY ABSORPTION FINE STRUCTURES (EXAFS);

NITRIDES;

EID: 0347877215     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00206-7     Document Type: Article

References (8)

1. S. Strite, H. Morkoc, J. Vac. Sci. Technol. B10 (1992) 1237.
2. S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, Jpn. J. Appl. Phys. 35 (1996) L74.
3. T.S. Cheng, L.C. Jenkins, S.E. Hooper, C.T. Foxon, J.W. Orton, D.E. Lacklison, Appl. Phys. Lett. 66 (1995) 1509.
4. J.W. Orton, D.E. Lacklison, N. Baba-Ali, C.T. Foxon, T.S. Cheng, S.V. Novikov, D.F.C. Johnston, S.E. Hooper, L.C. Jenkins, L.J. Challis, T.L. Tansley, J. Electron. Mater. 24 (1995) 263.
5. S.E. Hooper, C.T. Foxon, T.S. Cheng, L.C. Jenkins, D.E. Lacklison, J.W. Orton, T. Bestwick, A. Kean, M. Dawson, G. Duggan, J. Cryst. Growth 150 (1995) 892.
6. S.V. Kazakov, S.G. Konnikov, V.V. Tret'yakov, Izv. Akad. Nauk. SSSR, Ser. Fiz., V. 55 N.8 (1991) 1627.
7. A.V. Blant, T.S. Cheng, C.T. Foxon, J.C. Bussey, S.V. Novikov, V.V. Tret'yakov, Mater. Res. Soc. Symp. Proc. 449 (1996) 465.
8. H. I-hsiu, G.B. Stringfellow, Appl. Phys. Lett. 69 (1996) 2701.