Anomalous composition dependence of optical energies of MBE-grown InGaN

Materials Research Society Symposium - Proceedings

Volumn 798, Issue , 2003, Pages 673-676

  Fernandez Torrente, I ^a,d   Amabile, D ^a   Martin, R W ^a   O'Donnell, K P ^a   Mosselmans, J F W ^b   Calleja, E ^c   Naranjo, F B ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^d UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CATHODOLUMINESCENCE; ENERGY GAP; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PARAMETER ESTIMATION; PHOTOLUMINESCENCE;

BAND GAPS; BANDGAP ENERGIES; ENERGY INTERCEPTS; OPTICAL ENERGIES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2942685360     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-798-y5.47     Document Type: Conference Paper

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10. K. P. O'Donnell et al., Mat. Res. Symp. Proc. 737 13 (2003)