SCOPUS 정보 검색 플랫폼

Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 150-153

In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes

(7) O'Donnell, K P a White, M E a Pereira, S a Mosselmans, J F W b Grandjean, N c Damilano, B c Massies, J c

a UNIVERSITY OF STRATHCLYDE (United Kingdom)

b DARESBURY LABORATORY (United Kingdom)

c CNRS (France)

Author keywords

Extended X ray absorption fine structure; InGaN; Quantum dots

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; HETEROJUNCTIONS; LIGHT EMITTING DIODES; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

EXTENDED X-RAY ABSORPTION FINE STRUCTURE (EXAFS);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037198550 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(02)00010-7 Document Type: Conference Paper

Times cited : (4)

References (11)

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