Mechanical properties of epitaxial 3C silicon carbide thin films

Journal of Microelectromechanical Systems

Volumn 14, Issue 4, 2005, Pages 664-672

  Jackson, Kamili M ^a,b   Dunning, Jeremy ^c   Zorman, Christian A ^c   Mehregany, Mehran ^c   Sharpe Jr , William N ^d  

^a JOHNS HOPKINS UNIVERSITY   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

^c Case Western Reserve University   (United States)

^d Johns Hopkins University   (United States)

Author keywords

3C silicon carbide (3C SiC); Mechanical properties; Microfabrication; Tensile testing

Indexed keywords

ELASTIC MODULI; EPITAXIAL GROWTH; MECHANICAL PROPERTIES; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; REACTIVE ION ETCHING; SINGLE CRYSTALS; TENSILE STRENGTH; TENSILE TESTING; THIN FILMS;

MICROFABRICATION; SILICON CARBIDE THIN FILMS;

SILICON CARBIDE;

EID: 27144443701     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2005.847933     Document Type: Article

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