Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 880-885

  Lin, Hung Cheng ^a   Senanayake, Sidat ^a   Cheng, Keh Yung ^a   Hong, Minghwei ^b   Kwo, J Raynien ^b   Yang, Bin ^b   Mannaerts, J P ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

GaAs MOSFET; Ohmic contact; Taguchi method

Indexed keywords

ELECTRIC RESISTANCE; FABRICATION; GOLD COMPOUNDS; OHMIC CONTACTS; OPTIMIZATION; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS;

TAGUCHI METHOD;

MOSFET DEVICES;

EID: 0037818495     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812097     Document Type: Article

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