Optimization of RF plasma sources for the MBE growth of nitride and dilute nitride semiconductor material

Semiconductor Science and Technology

Volumn 22, Issue 2, 2007, Pages 15-19

  Grant, V A ^a   Campion, R P ^a   Foxon, C T ^a   Lu, W ^a   Chao, S ^a   Larkins, E C ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FLOW RATE; IDENTIFICATION (CONTROL SYSTEMS); MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS;

GAS COMPOSITIONS; ION CURRENTS; PLASMA POWERS;

PLASMA SOURCES;

EID: 34247261060     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/2/003     Document Type: Article

References (15)

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12. Foxon C T 2005 Private communication
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