Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides

Applied Physics Letters

Volumn 86, Issue 22, 2005, Pages 1-3

  Oye, Michael M ^a   Wistey, Mark A ^b   Reifsnider, Jason M ^c   Agarwal, Sumit ^d   Mattord, Terry J ^a   Govindaraju, Sridhar ^a   Hallock, Gary A ^a   Holmes Jr , Archie L ^a   Bank, Seth R ^b   Yuen, Homan B ^b   Harris Jr , James S ^b  

^a The University of Texas at Austin   (United States)

^b STANFORD UNIVERSITY   (United States)

^c Samsung Austin Semiconductor   (United States)

^d University of Massachusetts   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTE NITRIDES; ION DAMAGE EFFECTS; ION ENERGIES; ION FLUX;

MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTOR QUANTUM WELLS;

NITRIDES;

EID: 20844459288     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1940126     Document Type: Article

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