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Volumn 278, Issue 1-4, 2005, Pages 229-233

Nitrogen plasma optimization for high-quality dilute nitrides

Author keywords

A1. Defects; A1. Plasmas; A3. Molecular beam epitaxy; B1. Dilute nitrides; B2. Semiconducting gallium arsenide

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC POTENTIAL; MOLECULAR BEAM EPITAXY; NITROGEN; OPTIMIZATION; PHOTOLUMINESCENCE; PLASMAS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 18444388311     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.060     Document Type: Conference Paper
Times cited : (49)

References (16)
  • 8
    • 18444362969 scopus 로고    scopus 로고
    • Private communication
    • V. Gambin, Private communication;
    • Gambin, V.1
  • 9
    • 18444405147 scopus 로고    scopus 로고
    • Also M. Oye and coworkers at University Texas-Austin
    • Also M. Oye and coworkers at University Texas-Austin.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.