Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVD™

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1923-1926

  Tamulaitis, G ^a   Mickevicius J ^b   Shur, M S ^b   Fareed, R S Qhalid ^c   Zhang, J P ^c   Gaska, R ^c  

^a VILNIUS UNIVERSITY   (Lithuania)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION LENGTH; LIGHT-INDUCED TRANSIENT GRATING (LITG); TIME-RESOLVED PHOTOLUMINESCENCE (TRPL); 73.50.GR; 78.55.CR; 81.15.GH; LIGHT-INDUCED TRANSIENT GRATINGS; NON-RADIATIVE RECOMBINATIONS; PHOTOLUMINESCENCE DECAY; TIME-RESOLVED PHOTOLUMINESCENCE;

CRYSTAL DEFECTS; DIFFUSION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; EPILAYERS; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE; CARRIER LIFETIME;

EID: 33746379580     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565335     Document Type: Conference Paper

References (6)

1. S. F. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleisher, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, and S. Nakamura, Appl. Phys. Lett. 74, 1460 (1999).
2. S. Jursenas, S. Miasojedovas, G. Kurilcik, A. Zukauskas, and P. R. Hageman, Appl. Phys. Lett. 83, 66 (2003).
3. O. Brandt, H. Yang, and K. H. Ploog, Phys. Rev. B 54, R5215 (1996).
4. R. S. Qhalid Fareed, R. Jain, R. Gaska, M. S. Shur, J. Wu, W. Walukiewicz, and M. Asif Khan, Appl. Phys. Lett. 84, 1892 (2004)
5. A. Miller, Transient Grating Studies of Carrier Diffusion and Mobility in Semiconductors, in: E. Garmire and A. Kost (Eds.), Nonlinear Optics in Semiconductors II (Semiconductors and Semimetals, Vol. 59) (Academic Press, New York, 1999).
6. G. Tamulaitis, A. Zukauskas, J. W. Yang, M. A. Khan, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 75, 2277 (1999).