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Volumn 43, Issue 1, 1999, Pages 51-56

Abnormal transconductance and transient effects in partially depleted SOI MOSFETs

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Indexed keywords


EID: 8444237006     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00235-4     Document Type: Article
Times cited : (5)

References (15)
  • 2
    • 0030415283 scopus 로고    scopus 로고
    • Silicon-on-insulator substrates: Status and prognosis
    • Hovel HJ. Silicon-on-insulator substrates: status and prognosis. Proc IEEE Int SOI Conf 1996:1-3.
    • (1996) Proc IEEE Int SOI Conf , pp. 1-3
    • Hovel, H.J.1
  • 3
    • 0029513608 scopus 로고
    • Body charge related transient effects in floating body SOI nMOSFETs
    • Gautier J, Jenkins KA, Sun JY-C. Body charge related transient effects in floating body SOI nMOSFETs. IEDM Tech Dig 1995:623-626.
    • (1995) IEDM Tech Dig , pp. 623-626
    • Gautier, J.1    Jenkins, K.A.2    Sun, J.Y.-C.3
  • 4
    • 0029546067 scopus 로고
    • Low-voltage transient bipolar effect induced by dynamic floating-body charging in PD/SOI MOSFETs
    • Pelella M, Fossum JG, Suh D, Krishnan S, Jenkins KA. Low-voltage transient bipolar effect induced by dynamic floating-body charging in PD/SOI MOSFETs. Proc IEEE Int SOI Conf 1995:8-9.
    • (1995) Proc IEEE Int SOI Conf , pp. 8-9
    • Pelella, M.1    Fossum, J.G.2    Suh, D.3    Krishnan, S.4    Jenkins, K.A.5
  • 5
    • 0030150564 scopus 로고    scopus 로고
    • Measurement of transient effects in SOI DRAM/SRAM access transistors
    • Wei A, Antoniadis D A. Measurement of transient effects in SOI DRAM/SRAM access transistors. IEEE Electron Device Lett 1996;15(5):193-5.
    • (1996) IEEE Electron Device Lett , vol.15 , Issue.5 , pp. 193-195
    • Wei, A.1    Antoniadis, D.A.2
  • 8
    • 0029753842 scopus 로고    scopus 로고
    • History dependence of output characteristics of silicon-on-insulator (SOI) MOSFETs
    • Jenkins KA, Sun JYC, Gautier J. History dependence of output characteristics of silicon-on-insulator (SOI) MOSFETs. IEEE Electron Device Lett 1996;17(1):7-9.
    • (1996) IEEE Electron Device Lett , vol.17 , Issue.1 , pp. 7-9
    • Jenkins, K.A.1    Sun, J.Y.C.2    Gautier, J.3
  • 10
    • 8444249630 scopus 로고
    • The effect of operating frequency on propagation delay in silicon-on-sapphire digital integrated circuits
    • Eaton SS, Lalevic B. The effect of operating frequency on propagation delay in silicon-on-sapphire digital integrated circuits. IEDM Tech Dig 1976:192-194.
    • (1976) IEDM Tech Dig , pp. 192-194
    • Eaton, S.S.1    Lalevic, B.2
  • 12
    • 0021482809 scopus 로고
    • Transient drain current and propagation delay in SOI CMOS circuits
    • Lim HK, Fossum JG. Transient drain current and propagation delay in SOI CMOS circuits. IEEE Tran Electron Devices 1984;31:1251-8.
    • (1984) IEEE Tran Electron Devices , vol.31 , pp. 1251-1258
    • Lim, H.K.1    Fossum, J.G.2
  • 13
    • 0029406028 scopus 로고
    • Transient behavior of the kink effect in partially depleted SOI MOSFETs
    • Wei A, Sherony MJ, Antoniadis DA. Transient behavior of the kink effect in partially depleted SOI MOSFETs. IEEE Electron Device Lett 1995;16(11):494-6.
    • (1995) IEEE Electron Device Lett , vol.16 , Issue.11 , pp. 494-496
    • Wei, A.1    Sherony, M.J.2    Antoniadis, D.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.