Dislocation density evaluation using dislocation kinetics model

Journal of Crystal Growth

Volumn 303, Issue 1 SPEC. ISS., 2007, Pages 302-309

  Miyazaki, N ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

A1. Computer simulation; A1. Line defects; A1. Stresses; B2. Semiconducting gallium arsenide

Indexed keywords

ANISOTROPY; ANNEALING; COMPUTER SIMULATION; ELASTIC CONSTANTS; EPITAXIAL GROWTH; FINITE ELEMENT METHOD; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; STRAIN RATE;

CRYSTAL ANISOTROPY; DISLOCATION DENSITY; LINE DEFECTS; MULTIAXIAL STRESS;

DISLOCATIONS (CRYSTALS);

EID: 34047249905     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.331     Document Type: Article

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