A visco-plastic model of the deformation of InP during LEC growth taking into account dislocation annihilation

Journal of Crystal Growth

Volumn 252, Issue 1-3, 2003, Pages 92-101

  Gondet, S ^a   Duffar, T ^b   Louchet, F ^c   Theodore, F ^d   Van Den Bogaert, N ^e   Santailler, J L ^d  

^a InPACT SA   (France)

^b EPM MADYLAM   (France)

^c Grenoble INP Phelma   (France)

^d CEA GRENOBLE   (France)

^e UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

A1. Computer simulation; A1. Line defects; A1. Stresses; A2. Liquid encapsulated Czochralski method; B1. Phosphides

Indexed keywords

PLASTIC DEFORMATION; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE PROPERTIES; VISCOPLASTICITY;

DISLOCATION ANNIHILATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0037401372     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)00839-X     Document Type: Article

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