Development of three-dimensional dislocation density analysis code for annealing process of single crystal ingot

Journal of Crystal Growth

Volumn 243, Issue 1, 2002, Pages 47-54

  Miyazaki, N ^a   Kutsukake, H ^a   Kumamoto, A ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

A1. Computer simulation; A1. Crystal anisotropy; A1. Dislocation density; A1. Thermal stress; B1. Gallium arsenide

Indexed keywords

ANNEALING; CODES (SYMBOLS); COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; HEAT CONDUCTION; RESIDUAL STRESSES; SEMICONDUCTING GALLIUM ARSENIDE; SHEAR STRESS; THERMAL STRESS;

DISLOCATION DENSITY ANALYSIS;

SINGLE CRYSTALS;

EID: 0036076920     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01455-0     Document Type: Article

References (11)