Dislocation Density Simulations for Bulk Single Crystal Growth Process

Metals and Materials International

Volumn 4, Issue 4, 1998, Pages 883-890

  Miyazaki, N ^a   Kuroda, Y ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Czochralski growth; Dislocation density; Dislocation kinetics model; Finite element method; Silicon single crystal

Indexed keywords

CRYSTAL GROWTH; CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; ELASTIC MODULI; FINITE ELEMENT METHOD; GROWTH KINETICS; MONOCRYSTALLINE SILICON; SILICON WAFERS; SINGLE CRYSTALS;

BULK SINGLE CRYSTALS; COMPUTER CODES; DISLOCATION DENSITIES; ELEVATED TEMPERATURE; FINITE ELEMENT COMPUTER CODE; KINETICS MODELING; SILICON CRYSTAL; SILICON SINGLE CRYSTALS;

DISLOCATIONS (CRYSTALS);

EID: 0004541804     PISSN: 12259438     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03026417     Document Type: Article

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