Dislocation density analyses of bulk semiconductor single crystal during CZ growth process (Effects of crystal anisotropy)

JSME International Journal, Series A

Volumn 42, Issue 4, 1999, Pages 485-491

  Miyazaki, Noriyuki ^a   Kuroda, Yasuko ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Computational Mechanics; Creep; Crystal Anisotropy; Dislocation Density; Finite Element Method; Semiconductor Crystal

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CREEP; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); ELASTIC MODULI; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; POISSON RATIO; SEMICONDUCTING INDIUM PHOSPHIDE; SHEAR STRESS; THERMAL STRESS;

CRYSTAL ANISOTROPY; DISLOCATION DENSITY ANALYSIS; HAASEN-SUMIMO MODEL;

SINGLE CRYSTALS;

CREEP; CRYSTALLIZATION; DISLOCATION; SEMICONDUCTOR;

EID: 0005790508     PISSN: 13408046     EISSN: None     Source Type: Journal    
DOI: 10.1299/jsmea.42.485     Document Type: Article

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